Band structure engineering in gallium sulfide nanostructures

The gallium sulfide monolayer is demonstrated as a promising two-dimensional semiconductor material with considerable properties. present work, investigates the bandgap modulation of GaS under biaxial or uniaxial strain, using density functional theory calculation. We find that shows an indirect limits its optical applications. strain shifts from to direct in at $$\varepsilon $$ = − 10 percent along y direction. Also, by analyzing Poisson’s ratio, we figure out Gallium Sulfide has isotropic mechanical nature pressure. detailed reasons for are discussed projected states. Besides, investigate on nanoribbons through varying nanoribbon width well edge hydrogen passivations. accompanied feature monolayer, facilitates and moves up practical application.